欢迎访问深圳市中小企业公共服务平台电子信息窗口

NP8205MR 20V Dual N-Channel Enhancement Mode MOSFET

2025-09-17 来源: 作者:深圳市佰泰盛世科技有限公司
53

NP8205MR 20V Dual N-Channel Enhancement Mode MOSFET

1、Description

     The NP8205MR-S uses advanced trenchtechnology to provide excellent RDS(ON), low gatecharge and operation with gate voltages as low as2.5V. This device is suitable for use as a Batteryprotection or in other Switching application

2、General Features
VDS =20VID =6A
RDS(ON)=21 mΩ (typical) @ VGS=4.5V
RDS(ON)=26.5 mΩ (typical) @ VGS=2.5V
High power and current handing capability
Lead free product is acquired
Surface mount package

3、Application

Battery protection
Load switch

Power management

4、Website:www.baitaishengshi.com

5、Schematic diagram





相关文章